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| M/A-COM PHI, INC. PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY OUTLINE DRAWING FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25C Storage Temperature Junction Temperature VCES VEBO IC PTOT TSTG Tj 65 3.0 4.0 120 -65 to +200 200 Units V V A W C C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability BVCES ICES RTH(JC) PO GP 65 25 9.2 45 6 - Max 1.5 1.25 3:1 1.5:1 Units V mA C/W W dB % dB IC=10mA VCE=40V Test Conditions VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz RL VSWR-T VSWR-S BROADBAND TEST FIXTURE IMPEDANCE F (GHz) Z IF () Z OF () 2.70 2.80 2.90 38 - j14.4 35 - j16.3 33 - j17.8 17.1 - j8.7 15.0 - j8.7 13.3 - j8.3 TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 M/A-COM POWER HYBRIDS OPERATION * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 TEST FIXTURE ELECTRICAL SCHEMATIC - PH2729-25M M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS046 Rev 05/25/93 |
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